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Our products are broadly regarded and reliable by end users and can meet up with constantly transforming financial and social requires of Graphite paper, High Purity Graphite Sheet, Graphite paper for Semiconductor, Carbon Paper, Semiconductor graphite paper, For further info, you should usually do not hesitate to call us. All inquiries from you might be extremely appreciated.
Graphite paper, To create more creative products and solutions, maintain high-quality goods and update not only our products and solutions but ourselves so as to keep us ahead of the world, and the last but most vital one: to make every client satisfied with everything we present and to grow stronger together. To be the real winner, starts here!

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  • Ultra Pure Silicon Carbide Powder for Crystal Growth

    Ultra Pure Silicon Carbide Powder for Crystal Growth

    VeTek Semiconductor is a professional manufacturer and supplier, dedicated to providing high-quality Ultra Pure Silicon Carbide Powder for Crystal Growth. With a purity of up to 99.999% wt and extremely low impurity levels of nitrogen, boron, aluminum, and other contaminants, it is specifically designed to enhance the semi-insulating properties of high-purity silicon carbide. Welcome to inquire and cooperate with us!
  • Silicon Carbide Wafer Boat

    Silicon Carbide Wafer Boat

    VeTek Semiconductor's high-purity Silicon Carbide Wafer Boat is made of extremely pure silicon carbide material with excellent thermal stability, mechanical strength and chemical resistance. High-purity Silicon Carbide Wafer Boat is used in hot zone applications in semiconductor manufacturing, especially in high-temperature environments, and plays an important role in protecting wafers, transporting materials and maintaining stable processes. VeTek Semiconductor will continue to work hard to innovate and improve the performance of high-purity Silicon Carbide Wafer Boat to meet the evolving needs of semiconductor manufacturing. We look forward to becoming your long-term partner in China.Feel free to inquire us.
  • Rapid Thermal Annealing Susceptor

    Rapid Thermal Annealing Susceptor

    VeTek Semiconductor is a leading Rapid Thermal Annealing Susceptor manufacturer and supplier in China, focusing on providing high-performance solutions for the semiconductor industry. We have many years of deep technical accumulation in the field of SiC coating materials. Our Rapid Thermal Annealing Susceptor has excellent high temperature resistance and excellent thermal conductivity to meet the needs of wafer epitaxial manufacturing. You are welcome to visit our factory in China to learn more about our technology and products.
  • Graphite Heating Unit

    Graphite Heating Unit

    VeTek Semiconductor Graphite Heating Unit is a high-performance industrial heating solution made of high-purity graphite material, which can provide precise and efficient heating effect. Graphite Heating Unit is widely used in semiconductor, electronics, ceramics and other fields. Welcome your further inquiry.
  • SiC Ceramics Membrane

    SiC Ceramics Membrane

    Veteksemicon SiC ceramics membranes are a type of inorganic membrane and belong to solid membrane materials in membrane separation technology. SiC membranes are fired at a temperature above 2000℃. The surface of the particles is smooth and round. There are no closed pores or channels in the support layer and each layer. They are usually composed of three layers with different pore sizes.
  • SiC Shower Head

    SiC Shower Head

    VeTek Semiconductor is a leading SiC Shower Head manufacturer and innovator in China.We have been specialized in SiC material for many years.SiC Shower Head is chosen as a focusing ring material due to its excellent thermochemical stability, high mechanical strength and resistance to plasma erosion.We look forward to becoming your long-term partner in China.

  • Summary of Silicon Carbide (SiC) Manufacturing Process

    Silicon carbide abrasives are typically produced using quartz and petroleum coke as primary raw materials. In the preparatory stage, these materials undergo mechanical processing to achieve the desired particle size before being chemically proportioned into furnace charge.

  • Is Porous Graphite The Key To Faster Charging Batteries

    We’ve all felt that moment of panic. Your phone battery is at 5%, you have minutes to spare, and every second plugged in feels like an eternity. What if the secret to ending this anxiety lies not in a completely new chemistry, but in reimagining a fundamental material within the battery itself? For two decades at the forefront of tech, I’ve seen trends come and go. But the buzz around Porous Graphite feels different. It isn't just an incremental step; it represents a fundamental shift in how we approach energy storage design.

  • What is High-purity porous graphite?

    What is High-purity porous graphite ? - Vetek , This blog mainly introduces the specific working principle of High-purity porous graphite for SiC single crystal growth by PVT method.

  • Based on 8-inch silicon carbide single crystal growth furnace technology

    Silicon carbide is one of the ideal materials for making high-temperature, high-frequency, high-power and high-voltage devices. In order to improve production efficiency and reduce costs, the preparation of large-size silicon carbide substrates is an important development direction.

  • What is Silicon Carbide Crystal Growth?

    This blog takes "What is Silicon Carbide Crystal Growth?" as its theme and provides a detailed analysis from four dimensions: The Principle of Silicon Carbide Crystal Growth, The Crystal Structure of SiC, Physical Vapor Transport Method (PVT) and the Step Flow Growth to Grow Single Crystal.

  • Application of TaC-Coated Graphite Parts in Single Crystal Furnaces

    In the growth of SiC and AlN single crystals using the physical vapor transport (PVT) method, crucial components such as the crucible, seed holder, and guide ring play a vital role. As depicted in Figure 2 [1], during the PVT process, the seed crystal is positioned in the lower temperature region, while the SiC raw material is exposed to higher temperatures (above 2400 ℃).

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