Aixtron G5 MOCVD Susceptors

As the professional manufacturer, VeTek Semiconductor would like to provide you Aixtron G5 MOCVD Susceptors like Aixtron Epitaxy,  SiC coated graphite parts and TaC coated graphite parts. Welcome to inquiry us.

Aixtron G5 is a deposition system for compound semiconductors. AIX G5 MOCVD uses a production customer proven AIXTRON planetary reactor platform with a fully automated cartridge (C2C) wafer transfer system. Achieved the industry's largest single cavity size (8 x 6 inches) and largest production capacity. It offers flexible 6 - and 4-inch configurations designed to minimize production costs while maintaining excellent product quality. The warm wall planetary CVD system is characterized by the growth of multiple plates in a single furnace, and the output efficiency is high. 

VeTek Semiconductor offers a complete set of accessories for the Aixtron G5 MOCVD Susceptor system, which consists of these accessories:

1. Planetary Reactor Module

Function orientation: As the core reactor module of AIX G5 series, it adopts Planetary Technology to achieve high uniform material deposition in wafers.

Technical features:

Axisymmetric uniformity: The unique planetary rotation design ensures ultra-uniform distribution of wafer surfaces in terms of thickness, material composition and doping concentration.

Multi-wafer compatibility: Supports batch processing of 5 200mm (8-inch) wafers or 8 150mm wafers, significantly increasing productivity.

Temperature control optimization: With customizable Substrate Pockets, the wafer temperature is precisely controlled to reduce the bending of the wafer due to thermal gradients.

2. Ceiling (Temperature control ceiling system)

Function orientation: As the top temperature control component of the reaction chamber, to ensure the stability and energy efficiency of high temperature deposition environment.

Technical features:

Low heat flux design: The "Warm ceiling" technology reduces the heat flux in the vertical direction of the wafer, reduces the risk of wafer deformation, and supports the thinner silicon-based gallium nitride (GaN-on-Si) process.

In situ cleaning support: The integrated Cl₂ in situ cleaning function reduces the maintenance time of the reaction chamber and improves the continuous operation efficiency of the equipment.

3. Graphite Components

Function positioning: As a high temperature sealing and bearing component, to ensure the air tightness and corrosion resistance of the reaction chamber.

Technical features:

High temperature resistance: The use of high purity flexible graphite material, support -200℃ to 850℃ extreme temperature environment, suitable for the MOCVD process ammonia (NH₃), organic metal sources and other corrosive media.

Self-lubrication and resilience: The graphite ring has excellent self-lubrication characteristics, which can reduce mechanical wear, while the high resilience coefficient ADAPTS to the change of thermal expansion, ensuring long-term seal reliability.

Customized design: Support 45° oblique incision, V-shaped or closed structure to meet different cavity sealing requirements.

Fourth, supporting systems and expansion capabilities

Automated Wafer processing: Integrated Cassette-to-Cassette Wafer Handler for fully automated wafer loading/unloading with reduced manual intervention.

Process compatibility: Support the epitaxial growth of gallium nitride (GaN), phosphorus arsenide (AsP), Micro LED and other materials, suitable for radio frequency (RF), power devices, display technology and other fields of demand.

Upgrade flexibility: Existing G5 systems can be upgraded to the G5+ version with hardware modifications to accommodate larger wafers and advanced processes.

CVD SiC Film Crystal Structure:

Basic physical properties of CVD SiC coating: